دیتاشیت UMT1N
مشخصات دیتاشیت
| نام دیتاشیت |
UMT1N
|
| حجم فایل |
88.184
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Yangzhou Yangjie Elec Tech UMT1N
-
Transistor Type:
2PCSPNP
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Collector Current (Ic):
150mA
-
Power Dissipation (Pd):
250mW
-
Transition Frequency (fT):
140MHz
-
DC Current Gain (hFE@Ic,Vce):
120@1mA,6V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
50V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@50mA,5mA
-
Package:
SOT-323-6
-
Manufacturer:
Yangzhou Yangjie Elec Tech
-
Part id:
88085
